Simulation of characteristics of a nanophotonic electrooptical modulator on a silicon on insulator structure
N.V. Masalsky

 

Scientific Research Institute for System Analysis of the Russian Academy of Sciences

 

DOI: 10.18287/0134-2452-2015-39-2-152–157

Full text of article: Russian language.

Abstract:
A promising approach to simulating characteristics of silicon nanophotonic modulators fabricated using a standard Silicon On Insulator (SOI) fabrication process is discussed. Optical characteristics of the waveguide structure are changed by means of the free-carrier dispersion effect. On the basis of numerical calculations, the device topological parameters are optimized for achievement of superior modulation characteristics.

Keywords:
silicon photonic, waveguide optical structure, eloctrooptical modulator, Silicon On Insulator (SOI).

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