(25) * << * >> * Russian * English * Content * All Issues

Studies into mechanisms of generating a low-temperature plasma in high-voltage gas discharge

N.L. Kazanskiy1, V.A. Kolpakov2
1Image Processing Systems Institute of RAS
2Samara State Aerospace University

 PDF, 125 kB

Pages: 112-116.

The paper describes the mechanism of the formation of a high-voltage gas discharge, provides the experimental dependences characterizing the discharge parameters under various conditions of its existence.

low-temperature plasma, high-voltage gas, discharge.

Kazanskiy NL, Kolpakov VA. Studies into mechanisms of generating a low-temperature plasma in high-voltage gas discharge. Computer Optics 2003; 25: 112-116.


  1. Chernyaev VN. Physical and chemical processes in electronics manufacture. Moscow: "Vysshaya Shkola" Publisher; 1987.
  2. Ivanovsky GF. Ion-plasma processing of materials. Moscow: "Radio i Svyaz" Publisher; 1986.
  3. Kolpakov AI, Kolpakov VA, Krichevsky SV. Ion-plasma cleaning of low-power relay contacts. Elektronnaya promyshlennostj 1996; 5: 41-44.
  4. Kireev VY, Danilin BS, Kuznetsov VI. Plasma chemical and ion chemical etching of microstructures. Moscow: "Radio i Svyaz" Publisher; 1983.
  5. Doh H-H, Yeon Ch-K, Whang K-W. Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system. J Vac Sci Technol A 1997; 15(3): 664-667.
  6. Kovalevsky AA, Malyshev VS, Tsybulsky VV, Sorokin VM. Investigation of the process of isotropic plasma-chemical etching of silicon dioxide films. Microelectronika 2002; 31(5): 344-349.
  7. Woodworth JR, Aragon BP, Hamilton TW. Effect of bumps on the wafer on ion distribution functions in high-density argon and argonchlorine discharges. Appl Phys Lett 1997; 70(15): 1947-1949.
  8. Hebner GA, Blain MG, Hamilton TW. Influence of surface material on the boron chloride density in inductively coupled discharges. J Vac Sci Technol A 1999; 17(6): 3218-3224.
  9. Miyata K, Hori M, Goto T. CFX radical generation by plasma interaction with fluorocarbon films on the reactor wall. J Vac Sci Technol A 1996; 14(4): 2083-2087.
  10. Komine K, Araki N, Noge S, Ueno H, Hohkawa K. Residuals caused by the CF4 gas plasma etching process. Jpn J Appl Phys 1996; 35(5S): 3010-3014.
  11. McLane GF, Dubey M, Wood MC, Lynch KE. Dry etching of germanium in magnetron enhanced SF6 plasmas. J Vac Sci Technol B 1997; 15(4): 990-992.
  12. Wagner IV, et al. Elementary cell for the formation of electron beams of arbitrary shape in a high-voltage discharge in gas. Zhurnal Tekhnicheskoi Fiziki 1974; 44(8): 1669-1674.
  13. Komov AN, Kolpakov AI, Rafaevich BD, Bondareva NI. Increasing the conductance of contacts of power semiconductor devices. Elektronnaya Tekhnika 1979; Ser 7, 5(96): 7-10.
  14. Kolpakov VA, Kolpakov AI. Plasma-chemical etching of silicon dioxide in high-voltage gas discharge plasma. Proceeding of 3th International Youth School-Workshop BIKAMP-01 2001: 90-92.
  15. Komov AN, Kolpakov AI, Bondareva NI, Zakharenko VV. Electron-beam unit for soldering semiconductor devices. Pribory i Tekhnika Eksperimenta 1984; 5: 218-220.
  16. Molokovsky SI, Sushkov AD. Intense electron and ion beams. Moscow: "Energoatomizdat" Publisher; 1991.
  17. Rykalin NN, Zuev IV, Uglov AA. Fundamentals of electron beam processing of materials. Moscow: "Mashinostroenie" Publisher; 1978.
  18. Kolpakov VA, Kolpakov AI. Investigation of the entrainment of silicon atoms by “vacancies” formed in an aluminum melt when its surface is exposed to an ion-electron flux. Tech Phys Lett 1999; 25(8): 618-620.
  19. Chernetsky AV. Introduction to plasma physics. Moscow: "Atomizdat" Publisher; 1969.
  20. Raizer YP. Gas discharge physics. Moscow: "Nauka" Publisher; 1987.
  21. Kolpakov AI, Rastegaev VP. Electric-field analysis of a high-voltage gas-discharge gun. The manuscript was deposited at VINITI 1979; No. 1381-79.
  22. Izmailov SV. Thermal theory of electron emission under the impact of fast ions. Journal of Experiment aland Theoretical Physics 1939; 9(12): 1473-1483.
  23. Mataré HF. Defect electronics in semiconductors. John Wiley and Sons Inc; 1971.
  24. Kolpakov VA. Simulation of technological process of silicon dioxide etching in high-voltage gas discharge plasma. Microelectronika 2002; 31(6): 431-440.

© 2009, IPSI RAS
151, Molodogvardeiskaya str., Samara, 443001, Russia; E-mail: ko@smr.ru ; Tel: +7 (846) 242-41-24 (Executive secretary), +7 (846) 332-56-22 (Issuing editor), Fax: +7 (846) 332-56-20