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Some peculiarities of a new method of microrelief creation by the direct electron-beam etching of resist
M.A. Bruk, E.N. Zhikharev, D.R. Streltsov, V.A. Kalnov, A.V. Spirin, A.E. Rogozhin


L.Ya. Karpov Research Physical-Chemical Institute,
Physics and Technology Institute of the Russian Academy of Sciences,
Enikolopov Institute of Synthetic Polymer Materials of the Russian Academy of Sciences


DOI: 10.18287/0134-2452-2015-39-2-204-210

Full text of article: Russian language.


We discuss new results concerning the mechanism, characteristics and application potentialities of a novel method that allows an image to be generated in some positive resists directly during exposure by an electron beam in vacuum. In particular, using the PMMA resist as an example, we show that this method is very convenient for obtaining micro- and nano-reliefs with a rounded cross-section profile. Examples are given of obtaining 3D-structures with good accuracy of image vertical size and low surface roughness. In the authors opinion, the data presented show, on the whole, that the suggested method has application potentialities  for the manufacture of diffractive optical elements.

electron-beam lithography, new dry method of microrelief creation, optoelectronics, diffractive optical elements, 3D-structures.

Bruk MA, Zhikharev EN, Streltsov DR, Kalnov VA, Spirin AV, Rogozhin AE. Some peculiarities of a new method of microrelief creation by the direct electron-beam etching of resist. Computer Optics 2015; 39(2): 204-210. DOI: 10.18287/0134-2452-2015-39-2-204-210.


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